Vol. E91-C, No. 7 July 2008

Published: 2008-07-01

Foreword

FOREWORD

Takao WAHO

983-983
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FOREWORD

Yuzo YOSHIKUNI

1109-1109
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Letters

RCS Prediction Method from One-Dimensional Intensity Data in Near-Field

Yoshio INASAWA, Hiroaki MIYASHITA, Yoshihiko KONISHI

1167-1170
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A Partial Access Mechanism on a Register for Low-Cost Embedded Multimedia ASIP

Ha-young JEONG, Min-young CHO, Won HUR, Yong-surk LEE

1171-1174
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Papers

Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer

Masafumi ITO, Shigeru KISHIMOTO, Fumihiko NAKAMURA, Takashi MIZUTANI

989-993
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AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate

Sanghyun SEO, Kaustav GHOSE, Guang Yuan ZHAO, Dimitris PAVLIDIS

994-1000
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Enhancement-Mode n-Channel GaN MOSFETs Using HfO₂ as a Gate Oxide

Shun SUGIURA, Shigeru KISHIMOTO, Takashi MIZUTANI, Masayuki KURODA, Tetsuzo UEDA, Tsuyoshi TANAKA

1001-1003
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Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress

Jin-Ping AO, Yuya YAMAOKA, Masaya OKADA, Cheng-Yu HU, Yasuo OHNO

1004-1008
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Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs

Toshiharu MARUI, Shinich HOSHI, Masanori ITOH, Isao TAMAI, Fumihiko TODA, Hideyuki OKITA, Yoshiaki SANO, Shohei SEKI

1009-1014
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Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs

Keita MATSUDA, Takeshi KAWASAKI, Ken NAKATA, Takeshi IGARASHI, Seiji YAEGASSI

1015-1019
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A Study on Ohmic Contact to Dry-Etched p-GaN

Cheng-Yu HU, Jin-Ping AO, Masaya OKADA, Yasuo OHNO

1020-1024
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A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch

Koichi MAEZAWA, Ikuo SOGA, Shigeru KISHIMOTO, Takashi MIZUTANI, Kazuhiro AKAMATSU

1025-1030
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RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination

Makoto KASU, Kenji UEDA, Hiroyuki KAGESHIMA, Yoshiharu YAMAUCHI

1042-1049
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Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements

Jochen SIGMUND, Jean-Francois LAMPIN, Valentin IVANNIKOV, Cezary SYDLO, Michail FEIGINOV, Dimitris PAVLIDIS, Peter MEISSNER, Hans L. HARTNAGEL

1058-1062
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Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures

Hong-Quan ZHAO, Seiya KASAI, Tamotsu HASHIZUME, Nan-Jian WU

1063-1069
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Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors

Michihiko SUHARA, Eri UEKI, Tsugunori OKUMURA

1070-1075
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Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t

Norihide KASHIO, Kenji KURISHIMA, Yoshino K. FUKAI, Shoji YAMAHATA

1084-1090
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Large Signal Evaluation of Nonlinear HBT Model

Iltcho ANGELOV, Akira INOUE, Shinsuke WATANABE

1091-1097
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High-Performance 76-GHz Planar Gunn VCO

Yoshimichi FUKASAWA, Kiyoshi KAWAGUCHI, Takashi YOSHIDA, Takahiro SUGIYAMA, Atsushi NAKAGAWA

1098-1103
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1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p⁺-GaAs Gate Hetero-Junction FET

Fumio HARIMA, Yasunori BITO, Hidemasa TAKAHASHI, Naotaka IWATA

1104-1108
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Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect

Yu SHIMIZU, Sou KAWABE, Hiroya IWASAKI, Takayuki SUGIO, Kazuhiko SHIMOMURA

1110-1116
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Polymeric Waveguide Optical Switch Using Rotary Drive Mechanism

Toshitsugu UESUGI, Shiho ZAIZEN, Atsushi SUGITATSU, Tatsuo HATTA

1117-1120
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All-Optical Phase Multiplexing from π/2-Shifted DPSK-WDM to DQPSK Using Four-Wave Mixing in Highly-Nonlinear Fiber

Guo-Wei LU, Kazi Sarwar ABEDIN, Tetsuya MIYAZAKI

1121-1128
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Dispersion and Splice Characteristics of Bend-Insensitive Fibers with Trench-Index Profile Compliant with G.652

Shoichiro MATSUO, Tomohiro NUNOME, Kuniharu HIMENO, Haruhiko TSUCHIYA

1129-1135
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Designs and Fabrications of Photonic Crystal Fiber Couplers with Air Hole Controlled Tapers

Hirohisa YOKOTA, Hiroki KAWASHIRI, Yutaka SASAKI

1136-1141
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Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress

Kenta YAMADA, Takashi SATO, Shuhei AMAKAWA, Noriaki NAKAYAMA, Kazuya MASU, Shigetaka KUMASHIRO

1142-1150
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Design of a High-Precision DDS-Based Configurable Clock Generator

Hsin-Chuan CHEN

1151-1157
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Excitation Phenomena of Plasma Display Panel

Teruo KURAI

1158-1166
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Invited Papers

Development of High-Frequency GaN HFETs for Millimeter-Wave Applications

Masataka HIGASHIWAKI, Takashi MIMURA, Toshiaki MATSUI

984-988
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Current Status and Future Prospects of SiC Power JFETs and ICs

Jian H. ZHAO, Kuang SHENG, Yongxi ZHANG, Ming SU

1031-1041
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Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

J. Brad BOOS, Brian R. BENNETT, Nicolas A. PAPANICOLAOU, Mario G. ANCONA, James G. CHAMPLAIN, Yeong-Chang CHOU, Michael D. LANGE, Jeffrey M. YANG, Robert BASS, Doewon PARK, Ben V. SHANABROOK

1050-1057
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GaAs Industry in Europe-- Technologies, Trends and New Developments

Helmut JUNG, Herve BLANCK, Wolfgang BOSCH, Jim MAYOCK

1076-1083
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Vol. E91-C, No. 7 July 2008

Foreword

Letters

Papers

Invited Papers

Subscription

Information