Vol. E89-C, No. 7 July 2006

Accessibility Summary:

In accordance with Title II regulations this content meets all points of exemption as Archived web content and/or Preexisting conventional electronic documents.

Published: 2006-07-01

Foreword

FOREWORD

Takatomo ENOKI

873-873
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Letters

Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT

Yoshikazu HIROSE, Akira HONSHIO, Takeshi KAWASHIMA, Motoaki IWAYA, Satoshi KAMIYAMA, Michinobu TSUDA, Hiroshi AMANO, Isamu AKASAKI

1064-1067
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Self-Starting Pulse Generation from Cooled Erbium-Doped Fiber Ring Laser

Kazuhiko SUMIMURA, Hidetsugu YOSHIDA, Hisanori FUJITA, Masahiro NAKATSUKA, Minoru YOSHIDA

1106-1107
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Switching Characteristics of All-Optical Wavelength-Selective Switch Using Waveguide-Type Raman Amplifiers and 3-dB Couplers

Hiroki KISHIKAWA, Nobuo GOTO

1108-1111
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Self-Controlled Short Pulse Generator from All-Fiber Coupled Fabry-Perot Cavity

Kazuhiko SUMIMURA, Hidetsugu YOSHIDA, Hisanori FUJITA, Masahiro NAKATSUKA, Hisashi SAWADA

1112-1114
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763-nm Laser Light Source for Oxygen Monitoring Using Second Harmonic Generation in Direct-Bonded Quasi-Phase-Matched LiNbO₃ Ridge Waveguide

Osamu TADANAGA, Masaki ASOBE, Yoshiki NISHIDA, Hiroshi MIYAZAWA, Kaoru YOSHINO, Hiroyuki SUZUKI

1115-1117
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Papers

InP DHBT Based IC Technology for over 80 Gbit/s Data Communications

Rachid DRIAD, Robert E. MAKON, Karl SCHNEIDER, Ulrich NOWOTNY, Rolf AIDAM, Rudiger QUAY, Michael SCHLECHTWEG, Michael MIKULLA, Gunter WEIMANN

931-936
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Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies

Masato SEKI, Ryo ISHIKAWA, Kazuhiko HONJO

937-942
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Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation

Kazuhiro MOCHIZUKI, Ken-ichi TANAKA, Takashi SHIOTA, Takafumi TANIGUCHI, Hiroyuki UCHIYAMA

943-948
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Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs

Hideaki MATSUZAKI, Takashi MARUYAMA, Takatomo ENOKI, Masami TOKUMITSU

949-953
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W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs

Koji INAFUNE, Eiichi SANO, Hideaki MATSUZAKI, Toshihiko KOSUGI, Takatomo ENOKI

954-958
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HEMT CCD Matched Filter for Spread Spectrum Communication

Takahiro SUGIYAMA, Eiji NISHIMORI, Satoru ONO, Kiyoshi KAWAGUCHI, Atsushi NAKAGAWA

959-964
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Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes

Masahiro ASADA, Naoyuki ORIHASHI, Safumi SUZUKI

965-971
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Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer

Yasuyuki MIYAMOTO, Ryo NAKAGAWA, Issei KASHIMA, Masashi ISHIDA, Nobuya MACHIDA, Kazuhito FURUYA

972-978
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A Design of Continuous-Time Delta-Sigma Modulators Using a Fully-Differential Resonant-Tunneling Comparator

Keisuke EGUCHI, Masaru CHIBASHI, Shinpei NAKAGAWA, Mitsuhiro TANIHATA, Takao WAHO

979-984
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Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer

Mitsuhiro HANABE, Takuya NISHIMURA, Masaki MIYAMOTO, Taiichi OTSUJI, Eiichi SANO

985-992
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Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors

Yahya Moubarak MEZIANI, Jerzy <img src="/img_font/mos00225.jpg" (none), Nina DYAKONOVA, Wojciech KNAP, Dalius SELIUTA, Edmundas SIRMULIS, Jan DEVENSON, Gintaras VALUSIS, Frederic BOEUF, Thomas SKOTNICKI

993-998
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Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation

Youhei OOKAWA, Shigeru KISHIMOTO, Koichi MAEZAWA, Takashi MIZUTANI

999-1004
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Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer

Takuya NISHIMURA, Mitsuhiro HANABE, Masaki MIYAMOTO, Taiichi OTSUJI, Eiichi SANO

1005-1011
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Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect

Victor RYZHII, Akira SATOU, Michael S. SHUR

1012-1019
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Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities

Hideki ONO, Satoshi TANIGUCHI, Toshi-kazu SUZUKI

1020-1024
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Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage

Yong CAI, Yugang ZHOU, Kei May LAU, Kevin J. CHEN

1025-1030
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A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET

Daigo KIKUTA, Jin-Ping AO, Junya MATSUDA, Yasuo OHNO

1031-1036
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Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications

Oktay YILMAZOGLU, Kabula MUTAMBA, Dimitris PAVLIDIS, Marie Rose MBARGA

1037-1041
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Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage

Masaya OKADA, Ryohei TAKAKI, Daigo KIKUTA, Jin-Ping AO, Yasuo OHNO

1042-1046
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Improvement of CO Sensitivity in GaN-Based Gas Sensors

Eunjung CHO, Dimitris PAVLIDIS, Guangyuan ZHAO, Seth M. HUBBARD, Johannes SCHWANK

1047-1051
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Influence of NH₃-Plasma Pretreatment before Si₃N₄ Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs

Shinichi HOSHI, Toshiharu MARUI, Masanori ITOH, Yoshiaki SANO, Shouhei SEKI

1052-1056
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Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation

Masayuki ABE, Hiroyuki NAGASAWA, Stefan POTTHAST, Jara FERNANDEZ, Jorg SCHORMANN, Donat Josef AS, Klaus LISCHKA

1057-1063
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Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE

Xueliang SONG, Naoki FUTAKUCHI, Daisuke MIYASHITA, Foo Cheong YIT, Yoshiaki NAKANO

1068-1079
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A Single-Layer Hollow-Waveguide 8-Way Butler Matrix

Shin-ichi YAMAMOTO, Jiro HIROKAWA, Makoto ANDO

1080-1088
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A Very Low Power 10 MHz CMOS Continuous-Time Bandpass Filter with On-Chip Automatic Tuning

Gholamreza Zareh FATIN, Mohammad GHADAMI

1089-1096
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Fast and Accurate Power Bus Designer for Multi-Layers High-Speed Digital Boards

Yong-Ju KIM, Won-Young JUNG, Jae-Kyung WEE

1097-1105
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Invited Papers

Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress

Hideki HASEGAWA, Seiya KASAI, Taketomo SATO, Tamotsu HASHIZUME

874-882
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InP DHBT Integrated Circuits for Fiber-Optic High-Speed Applications

Jean GODIN, Agnieszka KONCZYKOWSKA, Muriel RIET, Jacques MOULU, Philippe BERDAGUER, Filipe JORGE

883-890
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Novel Devices for (Sub)millimeter-Wave Space Applications

Jan V. GRAHN, Piotr STARSKI, Jan STAKE, T. Sergey CHEREDNICHENKO

891-897
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RF MEMS--Enabling Technology for Millimeter-Waves

Youngwoo KWON, Sanghyo LEE

898-905
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Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

Andrea CORRION, Christiane POBLENZ, Patrick WALTEREIT, Tomas PALACIOS, Siddharth RAJAN, Umesh K. MISHRA, Jim S. SPECK

906-912
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Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs

Arvydas MATULIONIS

913-920
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Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si_0.7Ge_0.3 Virtual Substrates

Mathieu STOFFEL, Jing ZHANG, Oliver G. SCHMIDT

921-925
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Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors

Wojciech KNAP, Jerzy <img src="/img_font/mos00225.jpg" (none), Frederic TEPPE, Nina DYAKONOVA, Abdelouahad El FATIMY

926-930
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