Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor

Authors

  • Seok Gyu CHOI
  • Jung Hun OH
  • Bok Hyung LEE
  • Byeong Ok LIM
  • Sung Woon MOON
  • Dong Hoon SHIN
  • Sam Dong KIM
  • Jin Koo RHEE

Published

2006-05-01

Issue

Section

Papers