Ultrathin HfO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> Gate Insulator Formation by Electron Cyclotron Resonance Ar/N<SUB>2</SUB> Plasma Nitridation of HfO<SUB>2</SUB> Thin Films
Downloads
Published
2006-05-01
Issue
Section
Papers