Ultrathin HfO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> Gate Insulator Formation by Electron Cyclotron Resonance Ar/N<SUB>2</SUB> Plasma Nitridation of HfO<SUB>2</SUB> Thin Films

Authors

  • Shun-ichiro OHMI
  • Tomoki KUROSE
  • Masaki SATOH

Published

2006-05-01

Issue

Section

Papers